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SI4914BD Datasheet(PDF) 9 Page - Vishay Telefunken |
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SI4914BD Datasheet(HTML) 9 Page - Vishay Telefunken |
9 / 15 page Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 9 Vishay Siliconix Si4914BDY CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Reverse Current Schottky 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C VSD - Source-to-Drain Voltage (V) TJ = 25 °C 0 25 50 75 100 125 150 TJ - Temperature (°C) VDS =30 V VDS =20 V VDS =10 V 10-3 10-5 10-6 10-4 10-2 10-1 On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0 0.02 0.04 0.06 0.08 0.10 0 246 8 10 VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C 0 20 40 60 80 100 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 1ms 0.1 TA = 25 °C Single Pulse 10 ms 100 ms DC 1s 10 s Limited byRDS(on)* |
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