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1N4148-1 Datasheet(PDF) 1 Page - Microsemi Corporation

No. de pieza 1N4148-1
Descripción Electrónicos  Silicon Switching Diode
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Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

1N4148-1 Datasheet(HTML) 1 Page - Microsemi Corporation

  1N4148-1 Datasheet HTML 1Page - Microsemi Corporation  
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Maximum Ratings
Symbol
Value
Unit
Peak Inverse Voltage @ 5µA & 0.1µA @ -55oC
PIV
100 (Min).
Volts
Average Rectified Current
Iavg
200
mAmps
Continuous Forward Current
I
Fdc
300
mAmps
Peak Surge Current (t
peak = 1 sec.)
I
peak
1.0
Amp
BKC Power Dissipation T
L=50
oC, L = 3/8" from body
P
tot
500
mWatts
Operating Temperature Range
T
Op
-65 to +200
o C
Storage Temperature Range
T
St
-65 to +200
o C
Electrical Characteristics @ 25 oC*
Symbol
Minimum
Maximum
Unit
Forward Voltage Drop @ I
F = 10 mA
V
F
***
1.00
Volts
Breakdown Voltage @ I
R = 5 µA
PIV
75
Volts
Breakdown Voltage @ I
R = 100µA
PIV
100
Volts
Reverse Leakage Current @ V
R = 75 V
I
R
5 (100 @ 150 oC)
µA
Applications
Used in general purpose applications,where a controlled forward
characteristic and fast switching speed are important.
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available
Hermetic Glass Body
Available up to JANTXV-1 levels
"S" level screening available to Source Control Drawings-
i
Silicon Switching Diode
DO-35 Glass Package
1N4148
or
1N4148-1
Note 1: Per Method 4031-A with I
F =
10 mA,Vr = 6 V, R
L = 100 Ohms. * UNLESS OTHERWISE SPECIFIED
Reverse Recovery time (note 1)
t
rr
4.0
nSecs
Capacitance @ V
R = 0 V,
f = 1mHz
C
T
4.0
pF
DO-35 Glass Package
Dia.
0.06-0.09"
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08-
m m
1.53-2.28m m
0 .0 18-0 .0 22"
0 .458-0 .558m m
L
ea dDi
a .
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135


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