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1N483B Datasheet(PDF) 1 Page - Microsemi Corporation |
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1N483B Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 1 page High Conductance DO-35 Diodes 1N4150 Absolute Maximum Ratings Symbol Value Unit Average Forward Rectified Current at T Ambient = 25 o C I AV 0.65 Amp Maximum Non-Repetitive Surge (8.3 mSecs. 1/2 sine) I FSM 2.0 Amps Junction Temperature Range T j -65 to +200 oC Storage Temperature Range T S -55 to +200 oC Max. Average Power Dissipation Pdiss 250 mW Characteristics at T = 25oC Peak Maximum Maximum Maximum Leakage Minimum Inverse Voltage Average Rectified Forward Voltage Current Saturation (MIN.) Current Drop (I R) @ PIV Voltage (PIV) (I O)(VF) @ 0.1A 25 oC 150 oC (@0.1 mA) Type Volts Amps Volts µA µA Volts 1N482B 30 0.2 1.0 0.025 5 40 1N483B 60 0.2 1.0 0.025 5 80 1N484B 125 0.2 1.0 0.025 5 150 1N485B 175 0.2 1.0 0.025 5 200 1N486B 225 0.2 1.0 0.025 5 250 Features Humidity proof glass Thermally matched system No thermal fatigue No applications restrictions Sigma Bond™ plated contacts 100% guaranteed solderability Problem free assembly Six Sigma quality LL-35 MiniMELF types available LL-35 Glass miniMELF package available, substitute an LL prefix instead of "1N".. Use Advantages Used as a general purpose diode in power supplies, or in clipping and steering applications. Operation at temperatures up to 200 degrees C, no derating. Can be used in harsh environments where hermeticity and low cost are important. Compatible with all major automatic pick and place mounting equipment. May be used on ceramic boards along with high temperature IR solder reflow. 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 D O -35 G lass P ack age Dia. 0.06-0.09" 1.0" 25.4 m m (M in.) Leng th 0.120-.200" 3.05-5.08- mm 1.53-2.28 mm 0.018-0.022" 0.458-0.558 mm Lead Dia. 1N482B thru 1N486B |
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