MSAEX8P50A

500 Volts

8 Amps

1.2

Ω

Ω

Features

• High voltage p-channel power mosfet with parallel fast switching, soft

recovery fred; complements MSAFX24N50A

• Ultrafast body diode

• Rugged polysilicon gate cell structure

• Increased Unclamped Inductive Switching (UIS) capability

• Hermetically sealed, surface mount power package

• Low package inductance

•

Very low thermal resistance

•

Reverse polarity available upon request

DESCRIPTION

SYMBOL

MAX.

UNIT

Drain-to-Source Breakdown Voltage (Gate Shorted to Source)

≥ 25°C

500

Volts

500

Volts

Continuous Gate-to-Source Voltage

+/-20

Volts

Transient Gate-to-Source Voltage

+/-30

Volts

Continuous Drain Current

Tj= 25

°C

Tj=

100

°C

8

5

Amps

32

Amps

Repetitive Avalanche Current

8

Amps

Repetitive Avalanche Energy

30

mJ

Single Pulse Avalanche Energy

tbd

mJ

Voltage Rate of Change of the Recovery Diode

dv/dt

5.0

V/ns

Power Dissipation

300

Watts

Junction Temperature Range

-55 to +150

°C

Storage Temperature Range

-55 to +150

°C

Continuous Source Current (Body Diode)

8

Amps

Pulse Source Current (Body Diode)

32

Amps

Thermal Resistance, Junction to Case

θ

JC

0.35

°C/W

Maximum Ratings @ 25

°°C (unless otherwise specified)

Mechanical Outline

Datasheet# MSC0307A

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

P-CHANNEL

ENHANCEMENT MODE

POWER MOSFET/FRED

DRAIN

SOURCE

GATE