MSASC25W45K

(1N6816)

MSASC25W45KR

(1N6816R)

45 Volts

25 Amps

Features

• Tungsten schottky barrier

• Oxide passivated structure for very low leakage currents

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

polarity (strap-to-cathode: 1N6816R)

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

45

Volts

Working Peak Reverse Voltage

45

Volts

DC Blocking Voltage

45

Volts

Average Rectified Forward Current, Tc

≤145°C

25

Amps

derating, forward current, Tc

≥ 145°C

(3.3)

Amps/

°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

125

Amps

Peak Repetitive Reverse Surge Current, tp= 1

µs, f= 1kHz

2

Amp

Junction Temperature Range

-55 to +175

°C

Storage Temperature Range

-55 to +175

°C

Thermal Resistance, Junction to Case:

1N6816

1N6816R

θ

JC

1.25

1.35

°C/W

Maximum Ratings @ 25

°C (unless otherwise specified)

Mechanical Outline

ThinKey™ 2

Datasheet# MSC1033A

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

LOW LEAKAGE

SCHOTTKY DIODE