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SSA23L Datasheet(PDF) 1 Page - Vishay Siliconix |
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SSA23L Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page SSA23L, SSA24 www.vishay.com Vishay General Semiconductor Revision: 28-Apr-14 1 Document Number: 88882 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 30 V, 40 V IFSM 60 A EAS 11.25 mJ VF 0.38 V, 0.42 V TJ max. 150 °C Package DO-214AC (SMA) Diode variations Single die DO-214AC (SMA) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SSA23L SSA24 UNIT Device marking code 23L S24 V Maximum repetitive peak reverse voltage VRRM 30 40 V Maximum RMS voltage VRMS 21 28 V Maximum DC blocking voltage VDC 30 40 V Maximum average forward rectified currentat TL (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single halfsine-wave superimposed on rated load IFSM 60 A Non-repetitive avalanche energy at TA = 25 °C, IAS = 1.5 A, L = 10 mH EAS 11.25 mJ Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction temperature range TJ -65 to +150 °C Storage temperature range TSTG -65 to +150 °C |
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