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74LVC245ADTR2G Datasheet(PDF) 5 Page - ON Semiconductor |
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74LVC245ADTR2G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 9 page 74LVC245A www.onsemi.com 5 AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns) Symbol Parameter Conditions −40 to +85 5C −40 to +125 5C Unit Min Typ (Note 4) Max Min Typ (Note 4) Max tpd Propagation Delay (Note 5) An to Bn, Bn to An VCC = 1.2 V − 17.0 − − − − ns VCC = 1.65 V to 1.95 V 1.5 6.5 14.6 1.0 − 16.9 VCC = 2.3 V to 2.7 V 1.0 3.4 7.6 1.0 − 8.7 VCC = 2.7 V 1.0 3.4 7.3 1.0 − 9.5 VCC = 3.0 V to 3.6 V 1.0 2.9 6.3 1.0 − 8.0 ten Enable Time (Note 6) OE to An, Bn VCC = 1.2 V − 22.0 − − − − ns VCC = 1.65 V to 1.95 V 1.0 8.3 19.5 1.0 − 22.5 VCC = 2.3 V to 2.7 V 1.0 4.6 10.7 1.0 − 12.4 VCC = 2.7 V 1.0 4.8 9.5 0.5 − 12.0 VCC = 3.0 V to 3.6 V 0.5 3.7 8.5 0.5 − 11.0 tdis Disable Time (Note 7) OE to An, Bn VCC = 1.2 V − 12.0 − − − − ns VCC = 1.65 V to 1.95 V 1.0 5.5 12.3 1.0 − 14.2 VCC = 2.3 V to 2.7 V 1.0 3.1 7.1 1.0 − 8.2 VCC = 2.7 V 1.0 3.9 8.0 0.5 − 10.0 VCC = 3.0 V to 3.6 V 0.5 3.6 7.0 0.5 − 9.0 tsk(0) Output Skew Time (Note 8) − − 1.0 − − 1.5 ns 4. Typical values are measured at TA = 25°C and VCC = 3.3 V, unless stated otherwise. 5. tpd is the same as tPLH and tPHL. 6. ten is the same as tPZL and tPZH. 7. tdis is the same as tPLZ and tPHZ. 8. Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design. DYNAMIC SWITCHING CHARACTERISTICS Symbol Characteristic Condition TA = +25°C Unit Min Typ Max VOLP Dynamic LOW Peak Voltage (Note 9) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V 0.8 0.6 V V VOLV Dynamic LOW Valley Voltage (Note 9) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V −0.8 −0.6 V V 9. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit CIN Input Capacitance (OE, T/R) VCC = 3.3 V, VI = 0 V or VCC 4.0 pF CI/O Input/Output Capacitance VCC = 3.3 V, VI = 0 V or VCC 10.0 pF CPD Power Dissipation Capacitance (Note 10) Per input; VI = GND or VCC pF VCC = 1.65 V to 1.95 V 7.7 VCC = 2.3 V to 2.7 V 11.3 VCC = 3.0 V to 3.6 V 14.4 10. CPD is used to determine the dynamic power dissipation (PD in mW). PD = CPD x VCC2 x fi x N + S(CL x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in Volts N = number of outputs switching S(CL x VCC2 x fo) = sum of the outputs. |
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