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TPS28226 Datasheet(PDF) 1 Page - Texas Instruments |
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TPS28226 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 39 page 3 3 2 BOOT UGATE PHASE LGATE GND 1 8 5 4 Vout Vin (4.5 V to 24V) 6 VDD ENBL 7 PWM 3 Vc (4.5V to 8V) TPS28226 OUT FB 3 GND 3 VCC TL500X Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design TPS28226 SLUS791A – JULY 2007 – REVISED SEPTEMBER 2015 TPS28226 High-Frequency 4-A Sink Synchronous MOSFET Drivers 1 Features 2 Applications 1 • Drives Two N-Channel MOSFETs with 14-ns • Multi-Phase DC-to-DC Converters with Analog or Adaptive Dead Time Digital Control • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With • Desktop and Server VRMs and EVRDs Best Efficiency at 7 V to 8 V • Portable and Notebook Regulators • Wide Power System Train Input Voltage: 3 V Up • Synchronous Rectification for Isolated Power to 27 V Supplies • Wide Input PWM Signals: 2.0 V up to 13.2-V 3 Description Amplitude The TPS28226 is a high-speed driver for N-channel • Capable to Drive MOSFETs with ≥40-A Current complimentary driven power MOSFETs with adaptive per Phase dead-time control. This driver is optimized for use in • High Frequency Operation: 14-ns Propagation variety of high-current one and multi-phase DC-to-DC Delay and 10-ns Rise/Fall Time Allow FSW – 2 converters. The TPS28226 is a solution that provides MHz high efficiency, small size and low EMI emissions. • Capable to Propagate <30-ns Input PWM Pulses The efficiency is achieved by up to 8.8-V gate drive • Low-Side Driver Sink On-Resistance (0.4 Ω) voltage, 14-ns adaptive dead-time control, 14-ns Prevents dV/dT Related Shoot-Through Current propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4- Ω impedance for • 3-State PWM Input for Power Stage Shutdown the lower gate driver holds the gate of power • Space Saving Enable (Input) and Power Good MOSFET below its threshold and ensures no shoot- (Output) Signals on Same Pin through current at high dV/dt phase node transitions. • Thermal Shutdown The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge • UVLO Protection configuration. • Internal Bootstrap Diode • Economical SOIC-8 and Thermally Enhanced 3- Device Information(1) mm x 3-mm DFN-8 Packages PART NUMBER PACKAGE BODY SIZE (NOM) • High Performance Replacement for Popular 3- SOIC (8) 4.90 mm × 3.91 mm TPS28226 State Input Drivers VSON (8) 3.00 mm x 3.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Schematic 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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