3

3

2

BOOT

UGATE

PHASE

LGATE

GND

1

8

5

4

Vout

Vin (4.5 V to 24V)

6

VDD

ENBL

7

PWM

3

Vc (4.5V to 8V)

TPS28226

OUT

FB

3

GND

3

TL500X

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Design

TPS28226

SLUS791A – JULY 2007 – REVISED SEPTEMBER 2015

TPS28226 High-Frequency 4-A Sink Synchronous MOSFET Drivers

1 Features

2 Applications

1

•

Drives Two N-Channel MOSFETs with 14-ns

•

Multi-Phase DC-to-DC Converters with Analog or

Adaptive Dead Time

Digital Control

•

Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With

•

Desktop and Server VRMs and EVRDs

Best Efficiency at 7 V to 8 V

•

Portable and Notebook Regulators

•

Wide Power System Train Input Voltage: 3 V Up

•

Synchronous Rectification for Isolated Power

to 27 V

Supplies

•

Wide Input PWM Signals: 2.0 V up to 13.2-V

3 Description

Amplitude

The TPS28226 is a high-speed driver for N-channel

•

Capable to Drive MOSFETs with

≥40-A Current

complimentary driven power MOSFETs with adaptive

per Phase

dead-time control. This driver is optimized for use in

•

High Frequency Operation: 14-ns Propagation

variety of high-current one and multi-phase DC-to-DC

converters. The TPS28226 is a solution that provides

MHz

high efficiency, small size and low EMI emissions.

•

Capable to Propagate <30-ns Input PWM Pulses

The efficiency is achieved by up to 8.8-V gate drive

•

Low-Side Driver Sink On-Resistance (0.4

Ω)

voltage, 14-ns adaptive dead-time control, 14-ns

Prevents dV/dT Related Shoot-Through Current

propagation delays and high-current 2-A source and

4-A sink drive capability. The 0.4-

Ω impedance for

•

3-State PWM Input for Power Stage Shutdown

the lower gate driver holds the gate of power

•

Space Saving Enable (Input) and Power Good

MOSFET below its threshold and ensures no shoot-

(Output) Signals on Same Pin

through current at high dV/dt phase node transitions.

•

Thermal Shutdown

The bootstrap capacitor charged by an internal diode

allows use of N-channel MOSFETs in a half-bridge

•

UVLO Protection

configuration.

•

Internal Bootstrap Diode

•

Economical SOIC-8 and Thermally Enhanced 3-

Device Information(1)

mm x 3-mm DFN-8 Packages

PART NUMBER

PACKAGE

BODY SIZE (NOM)

•

High Performance Replacement for Popular 3-

SOIC (8)

4.90 mm × 3.91 mm

TPS28226

State Input Drivers

VSON (8)

3.00 mm x 3.00 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Simplified Schematic

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.