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LM75BIM-3/NOPB Datasheet(PDF) 4 Page - Texas Instruments |
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LM75BIM-3/NOPB Datasheet(HTML) 4 Page - Texas Instruments |
4 / 31 page LM75B, LM75C SNIS153D – JULY 2009 – REVISED OCTOBER 2015 www.ti.com 6.2 ESD Ratings VALUE UNIT LM75B Human-body model (HBM) ±2500 V(ESD) Electrostatic discharge(1) V Machine model ±250 LM75C Human-body model (HBM) ±1500 V(ESD) Electrostatic discharge(1) V Machine Model ±100 (1) Human body model, 100 pF discharged through a 1.5 k Ω resistor. Machine model, 200 pF discharged directly into each pin. The Charged Device Model (CDM) is a specified circuit characterizing an ESD event that occurs when a device acquires charge through some triboelectric (frictional) or electrostatic induction processes and then abruptly touches a grounded object or surface. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT TMIN TMAX Specified Temperature Range –55 125 °C Supply Voltage Range (+VS) LM75B, LM75C 3 5.5 V (1) Soldering process must comply with Texas Instruments Incorporated Reflow Temperature Profile specifications. Refer to (2) Reflow temperature profiles are different for lead-free and non-lead-free packages. 6.4 Thermal Information LM75B THERMAL METRIC(1) D (SOIC) DGK (VSSOP) UNIT 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 115.2 158.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 62.2 52.3 °C/W RθJB Junction-to-board thermal resistance 56.4 78.8 °C/W ψJT Junction-to-top characterization parameter 10.2 5.3 °C/W ψJB Junction-to-board characterization parameter 55.8 77.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 4 Submit Documentation Feedback Copyright © 2009–2015, Texas Instruments Incorporated Product Folder Links: LM75B LM75C |
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