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MMSF2P02E Datasheet(PDF) 1 Page - ON Semiconductor |
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MMSF2P02E Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 9 page Publication Order Number: MMSF2P02E/D © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 6 1 MMSF2P02E Preferred Device Power MOSFET 2 Amps, 20 Volts P−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. MiniMOS t devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed • Avalanche Energy Specified • Mounting Information for SO−8 Package Provided • IDSS Specified at Elevated Temperature MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current − Continuous @ TA = 25°C (Note 2.) − Continuous @ TA = 100°C − Single Pulse (tp ≤ 10 μs) ID ID IDM 2.5 1.7 13 Adc Apk Total Power Dissipation @ TA = 25°C (Note 2.) PD 2.5 Watts Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 6.0 Apk, L = 12 mH, RG = 25 Ω) EAS 216 mJ Thermal Resistance − Junction to Ambient (Note 2.) RθJA 50 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C 1. Negative sign for P−Channel device omitted for clarity. 2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. D S G P−Channel N−C 1 2 3 4 8 7 6 5 Top View Source Source Gate Drain Drain Drain Drain 1 8 2 AMPERES 20 VOLTS RDS(on) = 250 mW Device Package Shipping ORDERING INFORMATION MMSF2P02ER2 SO−8 2500 Tape & Reel SO−8 CASE 751 STYLE 13 http://onsemi.com LYWW MARKING DIAGRAM S4P01 L = Location Code Y = Year WW = Work Week PIN ASSIGNMENT Preferred devices are recommended choices for future use and best overall value. |
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