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MMSF2P02ER2 Datasheet(PDF) 6 Page - ON Semiconductor |
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MMSF2P02ER2 Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 9 page MMSF2P02E http://onsemi.com 6 TJ, STARTING JUNCTION TEMPERATURE (°C) 0 25 50 75 100 125 150 ID = 6 A 200 150 250 100 50 Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature Although many E−FETs can withstand the stress of drain−to−source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 13). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. Figure 14. Thermal Response t, TIME (s) 1 0.1 0.01 D = 0.5 SINGLE PULSE 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 0.2 0.1 0.05 0.02 0.01 1.0E+02 1.0E+03 0.001 10 0.0022 Ω 0.0210 Ω 0.2587 Ω 0.7023 Ω 0.6863 Ω 108.44 F 3.1413 F 0.3517 F 0.0207 F 0.0020 F Chip Ambient Normalized to θja at 10s. Figure 15. Diode Reverse Recovery Waveform di/dt trr ta tp IS 0.25 IS TIME IS tb |
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