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STD13005F Datasheet(Hoja de datos) 2 Page - AUK corp

No. de Pieza. STD13005F
Descripción  NPN Silicon Power Transistor
Descarga  4 Pages
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Fabricante  AUK [AUK corp]
Página de inicio  https:www.auk.co.kr
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 2 page
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KST-H019-000
2
STD13005F
Absolute maximum ratings
(Tc=25℃)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
700
V
Collector-Emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
9
V
Collector current (DC)
IC
4
A
Collector current (Pulse)
ICM
8
A
Base current (DC)
IB
2
A
Base current (Pulse)
IBM
4
A
Total Power dissipation (Tc=25℃)
PD
30
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
Electrical Characteristics
(Tc=25℃)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Emitter sustaining voltage
VCE(sus)
IC=10mA, IB=0
400
-
-
V
Collector cut-off current
ICEV
VCEV=Rated Value
VBE(off)=1.5V
-
-
1
mA
Emitter cut-off current
IEBO
VEB=9V, IC=0
-
-
1
mA
IC=1A, VCE=5V
10
-
60
DC Current gain
hFE*
IC=2A, VCE=5V
8
-
40
IC=1A, IB=0.2A
-
-
0.5
IC=2A, IB=0.5A
-
-
0.6
Collector-Emitter saturation voltage
VCE(sat)*
IC=4A, IB=1A
-
-
1
V
IC=1A, IB=0.2A
-
-
1.2
Base-Emitter saturation voltage
VBE(sat)*
IC=2A, IB=0.5A
-
-
1.6
V
Transition frequency
fT
VCB=10V, IC=0.5A, f=1MHz
4
-
-
MHz
Output capacitance
Cob
VCB=10V, IE=0, f=0.1MHz
-
65
-
pF
Turn on Time
tON
-
-
0.8
Storage Time
tSTG
-
-
4
Fall Time
tF
VCC=125V,IC=2A, RL=62.5Ω
IB1=-IB2=0.4A
-
-
0.9
* Pulse test: PW≤300 ㎲, Duty cycle≤2% Pulse




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