Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
DMP6110SVT-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
|
DMP6110SVT-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMP6110SVT Document number: DS37594 Rev. 2 - 2 2 of 7 www.diodes.com April 2015 © Diodes Incorporated DMP6110SVT Maximum Ratings (@T A = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = -10V TC = +25°C TC = +70°C ID -7.3 -5.8 A Maximum Body Diode Forward Current (Note 6) IS A Pulsed Drain Current (380µs Pulse, 1% Duty Cycle) IDM -24 A Avalanche Current (Note 7) L = 0.1mH IAS -19 A Repetitive Avalanche Energy (Note 7) L = 0.1mH EAS 18 mJ Thermal Characteristics (@T A = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 1.2 W TA = +70°C 0.75 Thermal Resistance, Junction to Ambient (Note 5) Steady state RJA 105 °C/W t<10s 60 °C/W Total Power Dissipation (Note 6) TA = +25°C PD 1.8 W TA = +70°C 1.1 Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 69 °C/W t<10s 39 °C/W Thermal Resistance, Junction to Case (Note 6) RJC 15 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@T A = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -60 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -1 µA VDS = -48V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = ±16V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) -1 -3 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) 105 mΩ VGS = -10V, ID = -4.5A 130 VGS = -4.5V, ID = -3.5A Diode Forward Voltage VSD -0.7 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 969 pF VDS = -30V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 57 Reverse Transfer Capacitance Crss 44 Gate Resistance RG 13.7 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = -4.5V) Qg 8.2 nC VDS = -30V, ID = -12A Total Gate Charge (VGS = -10V) Qg 17.2 Gate-Source Charge Qgs 3.0 Gate-Drain Charge Qgd 3.1 Turn-On Delay Time tD(ON) 4.4 ns VGS = -10V, VDS = -30V, RGEN = 3Ω, ID = -12A Turn-On Rise Time tR 23 Turn-Off Delay Time tD(OFF) 34 Turn-Off Fall Time tF 42 Body Diode Reverse Recovery Time tRR 13.2 ns IS = -12A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge QRR 6.18 nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
Número de pieza similar - DMP6110SVT-13 |
|
Descripción similar - DMP6110SVT-13 |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |