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FCH070N60E Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FCH070N60E Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page www.fairchildsemi.com 2 ©2015 Fairchild Semiconductor Corporation FCH070N60E Rev. 1.0 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCH070N60E FCH070N60E TO-247 Tube N/A N/A 30 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - V VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25oC- 0.7 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V - - 1 μA VDS = 480 V, VGS = 0 V,TC = 125oC- 3.4 - IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA2.5 - 3.5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 26 A - 58 70 m Ω gFS Forward Transconductance VDS = 20 V, ID = 26 A -44 - S Ciss Input Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 3705 4925 pF Coss Output Capacitance - 116 155 pF Crss Reverse Transfer Capacitance - 12.3 20 pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 457 - pF Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 26 A, VGS = 10 V (Note 4) - 128 166 nC Qgs Gate to Source Gate Charge - 18 - nC Qgd Gate to Drain “Miller” Charge - 54 - nC ESR Equivalent Series Resistance f = 1 MHz - 0.6 - Ω td(on) Turn-On Delay Time VDD = 380 V, ID = 26 A, VGS = 10 V, Rg = 4.7 Ω (Note 4) -29 68 ns tr Turn-On Rise Time - 28 66 ns td(off) Turn-Off Delay Time - 122 254 ns tf Turn-Off Fall Time - 28 66 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 52 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 156 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 26 A - - 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 26 A, dIF/dt = 100 A/μs - 463 - ns Qrr Reverse Recovery Charge - 10.4 - μC Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 9.5 A, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 26 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, Starting TJ = 25°C 4. Essentially independent of operating temperature. |
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