BA592 datasheet(3/4 Pages) INFINEON

No. de pieza	BA592

Descripción Electrónicos	Silicon RF Switching Diode

Download	4 Pages

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

Página de inicio	http://www.infineon.com

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3 / 4 page

Feb-04-2003

3

BA592/BA892...

Diode capacitance CT = (VR)

f = Parameter

0

5

10

15

20

V

30

VR

0

0.4

0.8

1.2

pF

2

1 MHz ... 1 GHz

Reverse parallel resistance RP = (VR)

f = Parameter

0

5

10

15

20

V

30

VR

-1

10

0

10

1

10

2

10

3

10

KOhm

100 MHz

1 GHz

Forward resistance rf = (IF)

f = 100MHz

10

-2

10

-1

10

0

10

1

10

2

mA

IF

-1

10

0

10

1

10

2

10

Ohm

Forward current IF = (VF)

TA = Parameter

0

0.2

0.4

0.6

0.8

V

1.2

VF

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

A

-40 °C

25 °C

85 °C

125 °C

Número de pieza similar - BA592

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NXP Semiconductors	BA592	64Kb / 8P	Band-switching diode 1998 May 07
Siemens Semiconductor G...	BA592	28Kb / 2P	Silicon RF Switching Diode
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Descripción similar - BA592

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Guangdong Kexin Industr...	BAR81W	36Kb / 1P	Silicon RF Switching Diode
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Infineon Technologies A...	BAR80	42Kb / 4P	Silicon RF Switching Diode Aug-17-2001
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Infineon Technologies A...	BAR81	75Kb / 6P	Silicon RF Switching Diode 2007-04-19
	BAT18	60Kb / 5P	Silicon RF Switching Diode 2007-03-29
	BAR81W	407Kb / 4P	Silicon RF Switching Diode Dec-20-2002
SEMTECH ELECTRONICS LTD...	BA592WS	245Kb / 3P	SILICON RF SWITCHING DIODE
Infineon Technologies A...	BAT18-04	815Kb / 5P	Silicon RF Switching Diode 2011-06-14
Infineon Technologies A...	BA-892-02V-H6127	976Kb / 11P	Silicon RF Switching Diode 2011-07-21

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BA592 Datasheet(PDF) 3 Page - Infineon Technologies AG

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Número de pieza similar - BA592

Descripción similar - BA592

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