BAS16S datasheet(4/10 Pages) INFINEON

No. de pieza	BAS16S

Descripción Electrónicos	Silicon Switching Diode

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

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4 / 10 page

Dec-04-2003

4

BAS16...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

CT

-

2

pF

Reverse recovery time

IF = 10 mA, IR = 10 mA, measured at IR = 1mA ,

RL = 100 Ω

trr

-

4

ns

Test circuit for reverse recovery time

EHN00017

Ι

F

D.U.T.

Oscillograph

Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns,

Ri = 50Ω

Oscillograph: R = 50

Ω, tr = 0.35ns, C = 0.05pF

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BAS16S Datasheet(PDF) 4 Page - Infineon Technologies AG

BAS16S Datasheet(HTML) 4 Page - Infineon Technologies AG

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