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BC846 Datasheet(PDF) 3 Page - Infineon Technologies AG

No. de Pieza. BC846
Descripción  NPN Silicon AF Transistors
Descarga  8 Pages
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Fabricante  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
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BC846 Datasheet(HTML) 3 Page - Infineon Technologies AG

   
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BC846...BC850
3
Nov-20-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
BC846
BC847/850
BC848/849
V(BR)CES
80
50
30
-
-
-
-
-
-
V
Emitter-base breakdown voltage
IE = 1 µA, IC = 0
BC846/847
BC848-850
V(BR)EBO
6
5
-
-
-
-
Collector cutoff current
VCB = 40 V, IE = 0
ICBO
-
-
15
nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
-
5
µA
DC current gain 1)
IC = 10 µA, VCE = 5 V
hFE-group A
hFE-group B
hFE-group C
hFE
-
-
-
140
250
480
-
-
-
-
DC current gain 1)
IC = 2 mA, VCE = 5 V
hFE-group A
hFE-group B
hFE-group C
hFE
110
200
420
180
290
520
220
450
800
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
-
-
90
200
250
600
mV
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
-
-
700
900
-
-
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
580
-
660
-
700
770
1) Pulse test: t
≤=300µs, D = 2%


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