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SI8655BA-B-IS Datasheet(PDF) 9 Page - Silicon Laboratories |
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SI8655BA-B-IS Datasheet(HTML) 9 Page - Silicon Laboratories |
9 / 44 page Rev. 1.8 9 Si8650/51/52/55 Table 3. Electrical Characteristics (VDD1 = 3.3 V±10%, VDD2 = 3.3 V±10%, TA = –40 to 125 °C) Parameter Symbol Test Condition Min Typ Max Unit VDD Undervoltage Threshold VDDUV+ VDD1, VDD2 rising 1.95 2.24 2.375 V VDD Undervoltage Threshold VDDUV– VDD1, VDD2 falling 1.88 2.16 2.325 V VDD Undervoltage Hysteresis VDDHYS 50 70 95 mV Positive-Going Input Thresh- old VT+ All inputs rising 1.4 1.67 1.9 V Negative-Going Input Thresh- old VT– All inputs falling 1.0 1.23 1.4 V Input Hysteresis VHYS 0.38 0.44 0.50 V High Level Input Voltage VIH 2.0 — — V Low Level Input Voltage VIL —— 0.8 V High Level Output Voltage VOH loh = –4 mA VDD1,VDD 2 –0.4 3.1 — V Low Level Output Voltage VOL lol = 4 mA — 0.2 0.4 V Input Leakage Current IL —— ±10 µA Output Impedance1 ZO —50— Enable Input High Current IENH VENx = VIH —2.0 — µA Enable Input Low Current IENL VENx = VIL —2.0 — µA DC Supply Current (All inputs 0 V or at supply) Si8650Bx, Ex, Si8655Bx VDD1 VDD2 VDD1 VDD2 VI = 0(Bx), 1(Ex) VI = 0(Bx), 1(Ex) VI = 1(Bx), 0(Ex) VI = 1(Bx), 0(Ex) — — — — 1.1 3.1 7.0 3.3 1.8 4.7 9.8 5.0 mA Si8651Bx, Ex VDD1 VDD2 VDD1 VDD2 VI = 0(Bx), 1(Ex) VI = 0(Bx), 1(Ex) VI = 1(Bx), 0(Ex) VI = 1(Bx), 0(Ex) — — — — 1.5 2.7 6.6 4.0 2.4 4.1 9.2 6.0 mA Si8652Bx, Ex VDD1 VDD2 VDD1 VDD2 VI = 0(Bx), 1(Ex) VI = 0(Bx), 1(Ex) VI = 1(Bx), 0(Ex) VI = 1(Bx), 0(Ex) — — — — 2.0 2.4 5.6 5.0 3.0 3.6 7.8 7.5 mA Notes: 1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces. 2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, load, and ambient temperature. 3. Start-up time is the time period from the application of power to valid data at the output. |
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