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BCW66G Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BCW66G Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 5 page BCW65, BCW66 3 Jul-10-2001 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics DC current gain 1) IC = 500 mA, VCE = 2 V hFE-grp.A/F hFE-grp.B/G hFE-grp.C/H hFE - - - 35 60 100 - - - - Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VCEsat - - - - 0.3 0.7 V Base-emitter saturation voltage 1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA VBEsat - - - - 1.25 2 AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT - 170 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 6 - pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 60 - |
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Descripción similar - BCW66G |
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