BDP949 datasheet(2/4 Pages) INFINEON

No. de pieza	BDP949

Descripción Electrónicos	Silicon NPN Transistor

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

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2 / 4 page

BDP947, BDP949

2

Aug-06-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

BDP947

BDP949

V(BR)CEO

45

60

-

V

Collector-base breakdown voltage

IC = 100 µA, IB = 0

BDP947

BDP949

V(BR)CBO

45

60

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

5

-

Collector cutoff current

VCB = 45 V, IE = 0

ICBO

-

100

nA

Collector cutoff current

VCB = 45 V, IE = 0 , TA = 150 °C

ICBO

-

20

µA

Emitter cutoff current

VEB = 4 V, IC = 0

IEBO

-

100

nA

DC current gain 1)

IC = 10 mA, VCE = 5 V

IC = 500 mA, VCE = 1 V

IC = 2 A, VCE = 2 V

hFE

25

85

50

-

475

-

Collector-emitter saturation voltage1)

IC = 2 A, IB = 0.2 A

VCEsat

-

0.5

V

Base-emitter saturation voltage 1)

IC = 2 A, IB = 0.2 A

VBEsat

-

1.3

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 100 MHz

fT

-

100

-

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

-

25

-

pF

1) Pulse test: t

≤=300µs, D = 2%

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