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SI53112 Datasheet(PDF) 4 Page - Silicon Laboratories |
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SI53112 Datasheet(HTML) 4 Page - Silicon Laboratories |
4 / 35 page Si53112 4 Rev. 1.1 1. Electrical Specifications Table 1. DC Operating Characteristics VDD_A =3.3 V±5%, VDD =3.3 V±5% Parameter Symbol Test Condition Min Max Unit 3.3 V Core Supply Voltage VDD/VDD_A 3.3 V ±5% 3.135 3.465 V 3.3 V I/O Supply Voltage1 VDD_IO 1.05 V to 3.3 V ±5% 0.9975 3.465 V 3.3 V Input High Voltage VIH VDD 2.0 VDD+0.3 V 3.3 V Input Low Voltage VIL VSS-0.3 0.8 V Input Leakage Current2 IIL 0 < VIN < VDD –5 +5 µA 3.3 V Input High Voltage3 VIH_FS VDD 0.7 VDD+0.3 V 3.3 V Input Low Voltage3 VIL_FS VSS–0.3 0.35 V 3.3 V Input Low Voltage VIL_Tri 0 0.8 V 3.3 V Input Med Voltage VIM_Tri 1.2 1.8 V 3.3 V Input High Voltage VIH_Tri 2.2 VDD V 3.3 V Output High Voltage4 VOH IOH =–1mA 2.4 — V 3.3 V Output Low Voltage4 VOL IOL =1 mA — 0.4 V Input Capacitance5 CIN 2.5 4.5 pF Output Capacitance5 COUT 2.5 4.5 pF Pin Inductance LPIN —7 nH Ambient Temperature TA No Airflow –40 85 °C Notes: 1. VDD_IO applies to the low-power NMOS push-pull HCSL compatible outputs. 2. Input Leakage Current does not include inputs with pull-up or pull-down resistors. Inputs with resistors should state current requirements. 3. Internal voltage reference is to be used to guarantee VIH_FS and VIL_FS thresholds levels over full operating range. 4. Signal edge is required to be monotonic when transitioning through this region. 5. Ccomp capacitance based on pad metallization and silicon device capacitance. Not including pin capacitance. Table 2. Current Consumption TA = –40 to 85 °C; supply voltage VDD =3.3 V ±5% Parameter Symbol Test Condition Min Typ Max Unit Operating Current IDDVDD 133 MHz, VDD Rail — 18 25 mA IDDVDDA 133 MHz, VDDA + VDDR, PLL Mode — 17 20 mA IDDVDDIO 133 MHz, CL = Full Load, VDD IO Rail — 85 110 mA Power Down Current IDDVDDPD Power Down, VDD Rail — 0.4 1 mA IDDVDDAPD Power Down, VDDA Rail — 2 5 mA IDDVDDIOPD Power Down, VDD_IO Rail — 0.2 0.5 mA |
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