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LMX2531LQE1515E Datasheet(PDF) 6 Page - Texas Instruments

No. de pieza LMX2531LQE1515E
Descripción Electrónicos  High-Performance Frequency Synthesizer System
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LMX2531LQE1515E Datasheet(HTML) 6 Page - Texas Instruments

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LMX2531
SNAS252S – OCTOBER 2005 – REVISED DECEMBER 2014
www.ti.com
7.5 Electrical Characteristics
(VCC = 3.0 V, –40°C ≤ TA ≤ 85 °C; except as specified.)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CURRENT CONSUMPTION
LMX2531LQ2265E/
38
44
2570E
Divider Disabled
LMX2531LQ2820E/
38
46
3010E
All Other Options
34
41
Power Supply Current Power
ICC
mA
Supply Current
LMX2531LQ2265E/
41
49
2570E
Divider Enabled
LMX2531LQ2820E/
44
52
3010E
All Other Options
37
46
ICCPD
Power Down Current
CE = 0 V, Part Initialized
7
µA
OSCILLATOR
IIHOSC
Oscillator Input High Current
VIH = 2.75 V
100
µA
IILOSC
Oscillator Input Low Current
VIL = 0
–100
µA
fOSCin
Frequency Range
See(1)
5
80
MHz
vOSCin
Oscillator Sensitivity
0.5
2.0
Vpp
PLL
fPD
Phase Detector Frequency
32
MHz
ICP = 0
90
µA
ICP = 1
180
µA
Charge Pump
ICPout
Output Current Magnitude
ICP = 3
360
µA
ICP = 15
1440
µA
ICPoutTRI
CP TRI-STATE Current
0.4 V < VCPout < 2.0 V
2
10
nA
Charge Pump
VCPout = 1.2 V
ICPoutMM
2%
8%
Sink vs Source Mismatch
TA = 25°C
Charge Pump
0.4 V < VCPout < 2.0 V
ICPoutV
4%
Current vs CP Voltage Variation
TA = 25°C
CP Current vs Temperature
ICPoutT
VCPout = 1.2 V
8%
Variation
Normalized PLL 1/f Noise
ICP = 1X Charge Pump Gain
–94
LNPLL_flicker(10 kHz)
dBc/Hz
ICP = 16X Charge Pump Gain
–104
See(2)
LN(f)
Normalized PLL Noise Floor
ICP = 1X Charge Pump Gain
–202
LNPLL_flat
dBc/Hz
ICP = 16X Charge Pump Gain
–212
See(3)
(1)
There are program bits that need to be set based on the OSCin frequency. Refer to the following sections: XTLSEL[2:0] -- OSCin
Select, XTLDIV[1:0] -- Division Ratio for the OSCin Frequency, XTLMAN[11:0] -- Manual OSCin Mode, XTLMAN2 -- Manual Crystal
Mode Second Adjustment, and LOCKMODE -- Frequency Calibration Mode. Not all bit settings can be used for all frequency choices of
OSCin. For instance, automatic modes described in XTLSEL[2:0] -- OSCin Select do not work below 8 MHz.
(2)
One of the specifications for modeling PLL in-band phase noise is the PLL 1/f noise normalized to 1 GHz carrier frequency and 10 kHz
offset, LPLL_flicker(10 kHz). From this normalized index of PLL 1/f noise, the PLL 1/f noise can be calculated for any carrier and offset
frequency as: LNPLL_flicker(f) = LPLL_flicker(10 kHz) – 10 × log (10 kHz / f) + 20 × log ( Fout / 1 GHz ). Flicker noise can dominate at low
offsets from the carrier and has a 10 dB/decade slope and improves with higher charge pump currents and at higher offset frequencies .
To accurately measure LPLL_flicker(10 kHz) it is important to use a high phase detector frequency and a clean reference to make it such
that this measurement is on the 10 dB/decade slope close to the carrier. LPLL_flicker(f) can be masked by the reference oscillator
performance if a low power or noisy source is used. The total PLL in-band phase noise performance is the sum of LPLL_flicker(f) and
LPLL_flat. In other words,LPLL(f) = 10 × log (10 (
LN
PLL_flat
/ 10 ) + 10(LN
PLL_flicker
(f) / 10 )
(3)
A specification used for modeling PLL in-band phase noise floor is the Normalized PLL noise floor, LNPLL_flat, and is defined as:
LNPLL_flat = L(f) – 20 × log (N) – 10 × log(fPD). LPLL_flat is the single side band phase noise in a 1 Hz Bandwidth and fPD is the phase
detector frequency of the synthesizer. LPLL_flat contributes to the total noise, L(f). To measure LPLL_flat the offset frequency must be
chosen sufficiently smaller then the loop bandwidth of the PLL, and yet large enough to avoid a substantial noise contribution from the
reference and PLL flicker noise. LPLL_flat can be masked by the reference oscillator performance if a low power or noisy source is used.
The total PLL in-band phase noise performance is the sum of LPLL_flicker(f) and LPLL_flat. In other words, LPLL(f) = 10 × log (10 (
LN
PLL_flat
/ 10 )
+ 10 (LN
PLL_flicker
(f) / 10 )
6
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