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STB30NF20L Datasheet(PDF) 1 Page - STMicroelectronics |
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STB30NF20L Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 14 page This is information on a product in full production. March 2012 Doc ID 022753 Rev 2 1/14 14 STB30NF20L N-channel 200 V, 0.065 Ω, 30 A STripFET™ Power MOSFET in D2PAK package Datasheet — production data Features ■ Gate charge minimized ■ 100% avalanche tested ■ Excellent figure of merit (RDS* Qg) ■ Very good manufacturing repeatability ■ Very low intrinsic capacitance Applications ■ Automotive Description This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram Order code VDSS RDS(on) ID PTOT STB30NF20L 200 V 0.075 Ω 30 A 150 W 1 3 D²PAK TAB Table 1. Device summary Order code Marking Package Packaging STB30NF20L 30NF20L D²PAK Tape and reel www.st.com |
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