STGIPS30C60T-H datasheet(5/19 Pages) STMICROELECTRONICS

No. de pieza	STGIPS30C60T-H

Descripción Electrónicos	SLLIMM??small low-loss intelligent molded module IPM, 3-phase inverter - 30 A, 600 V short-circuit rugged IGBT

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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5 / 19 page

DocID025530 Rev 3

5/19

STGIPS30C60T-H

Electrical ratings

19

2

Electrical ratings

2.1

Absolute maximum ratings

Table 3. Inverter part

Symbol

Parameter

Value

Unit

VPN

Supply voltage applied between P - NU, NV, NW

450

V

VPN(surge)

Supply voltage (surge) applied between P - NU,

NV, NW

500

V

VCES

Each IGBT collector emitter voltage (VIN

(1) = 0)

1.

Applied between

HINi, LINi and GND for i = U, V, W

600

V

± IC

Each IGBT continuous collector current

at TC = 25°C

30

A

± ICP

(2)

2.

Pulse width limited by max junction temperature

Each IGBT pulsed collector current

60

A

PTOT

Each IGBT total dissipation at TC = 25°C

52

W

tscw

Short circuit withstand time, VCE = 0.5 V(BR)CES

TJ = 125 °C, VCC = Vboot= 15 V, VIN (1)= 0 - 5 V

5µs

Table 4. Control part

Symbol

Parameter

Value

Unit

VOUT

Output voltage applied between

OUTU, OUTV, OUTW - GND

Vboot - 21 to Vboot + 0.3

V

VCC

Low voltage power supply

-0.3 to +21

V

Vboot

Bootstrap voltage applied between

Vboot i - OUTi for i = U, V, W

-0.3 to 620

V

VIN

Logic input voltage applied between HIN, LIN and

GND

-0.3 to 15

V

VSD

Open drain voltage

-0.3 to 15

V

dVOUT/dt Allowed output slew rate

50

V/ns

Table 5. Total system

Symbol

Parameter

Value

Unit

VISO

Isolation withstand voltage applied between each

pin and heatsink plate (AC voltage, t = 60 sec.)

2500

V

Tj

Power chips operating junction temperature

-40 to 150

°C

TC

Module case operation temperature

-40 to 125

°C

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STGIPS30C60T-H Datasheet(PDF) 5 Page - STMicroelectronics

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