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STU9HN65M2 Datasheet(PDF) 4 Page - STMicroelectronics |
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STU9HN65M2 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STU9HN65M2 4/12 DocID027605 Rev 2 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 5: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 650 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 650 V 1 µA VGS = 0 V, VDS = 650 V, TC = 125 °C 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 2.5 A 0.71 0.82 Ω Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS= 100 V, f = 1 MHz, VGS = 0 V - 325 - pF Coss Output capacitance - 16 - pF Crss Reverse transfer capacitance - 0.85 - pF Coss eq. (1) Equivalent output capacitance VDS = 0 V to 520 V, VGS = 0 V - 109 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5.6 - Ω Qg Total gate charge VDD = 520 V, ID = 5 A, VGS = 10 V (see Figure 15: "Gate charge test circuit") - 11.5 - nC Qgs Gate-source charge - 2.5 - nC Qgd Gate-drain charge - 5 - nC Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 2.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Switching times test circuit for resistive load" and Figure 19: "Switching time waveform") - 7.5 - ns tr Rise time - 4.6 - ns td(off) Turn-off-delay time - 24 - ns tf Fall time - 14.5 - ns |
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