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STE145N65M5 Datasheet(Hoja de datos) 5 Page - STMicroelectronics

No. de Pieza. STE145N65M5
Descripción  Low gate charge and input capacitance
Descarga  13 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STE145N65M5
Electrical characteristics
DocID025538 Rev 2
5/13
Table 6: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(V)
Voltage delay time
VDD = 400 V, ID = 85 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 16: "Test circuit for
inductive load switching and
diode recovery times" and
Figure 19: "Switching time
waveform")
-
255
-
ns
tr(V)
Voltage rise time
-
11
-
ns
tf(i)
Current fall time
-
82
-
ns
tC(off)
Crossing time
-
88
-
ns
Table 7: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
143
A
ISDM,
(1)
Source-drain current
(pulsed)
-
572
A
VSD
(2)
Forward on voltage
VGS = 0 V, ISD = 143 A
-
1.5
V
trr
Reverse recovery time
ISD = 143 A, di/dt = 100 A/µs,
VDD = 100 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
-
568
ns
Qrr
Reverse recovery charge
-
14.5
µC
IRRM
Reverse recovery current
-
51
A
trr
Reverse recovery time
ISD = 143 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150 °C
(see Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
-
728
ns
Qrr
Reverse recovery charge
-
24.5
µC
IRRM
Reverse recovery current
-
67
A
Notes:
(1)
Pulse width is limited by safe operating area
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%




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