STFU18N65M2 datasheet(1/12 Pages) STMICROELECTRONICS

No. de pieza	STFU18N65M2

Descripción Electrónicos	Extremely low gate charge

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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October 2015

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This is information on a product in full production.

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STFU18N65M2

N-

channel 650 V, 0.275 Ω typ., 12 A MDmesh™ M2

Power MOSFET in a TO-220FP ultra narrow leads package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max

ID

STFU18N65M2

650 V

0.33 Ω

12 A



Extremely low gate charge



Excellent output capacitance (Coss) profile



100% avalanche tested



Zener-protected

Applications



Switching applications



LLC converters, resonant converters

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packaging

STFU18N65M2

18N65M2

TO-220FP

ultra narrow leads

Tube

TO-220FP

ultra narrow leads

1

2

3

AM15572v1_no_tab

D(2)

G(1)

S(3)

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STFU18N65M2 Datasheet(PDF) 1 Page - STMicroelectronics

STFU18N65M2 Datasheet(HTML) 1 Page - STMicroelectronics

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