STL7LN80K5 datasheet(3/16 Pages) STMICROELECTRONICS

No. de pieza	STL7LN80K5

Descripción Electrónicos	N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a PowerFLAT??5x6 VHV package

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STL7LN80K5

Electrical ratings

DocID028831 Rev 2

3/16

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

V

ID

(1)

Drain current (continuous) at TC = 25 °C

5

A

ID

(1)

Drain current (continuous) at TC = 100 °C

3.4

A

ID

(2)

Drain current (pulsed)

20

A

PTOT

Total dissipation at TC = 25 °C

42

W

dv/dt

(3)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt

(4)

MOSFET dv/dt ruggedness

50

Tstg

Storage temperature range

- 55 to 150

°C

TJ

Operating junction temperature range

Notes:

(1)

Limited by maximum junction temperature.

(2)

Pulse width limited by safe operating area

(3)

ISD ≤ 5 A, di/dt 100 A/μs; VDS peak < V(BR)DSS,VDD= 640 V

(4)

VDS ≤ 640 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

3

°C/W

Rthj-pcb

(1)

Thermal resistance junction-pcb

59

°C/W

Notes:

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width

limited by Tjmax)

1.5

A

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR,

VDD = 50 V)

200

mJ

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