STPSC12H065C datasheet(2/8 Pages) STMICROELECTRONICS

No. de pieza	STPSC12H065C

Descripción Electrónicos	650 V power Schottky silicon carbide diode

Download	8 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

Logo

2 / 8 page

Characteristics

STPSC12H065C

2/8

DocID024809 Rev 3

1

Characteristics

When the diodes 1 and 2 are used simultaneously:

T

j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 1.35 x IF(AV) + 0.192 x IF

2

(RMS)

Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

V

IF(RMS)

Forward rms current

22

A

IF(AV)

Average forward current

Tc = 135 °C

(1), DC

Per diode

6

A

Tc = 135 °C

(2), DC

Per device

12

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

60

52

400

A

IFRM

Repetitive peak forward current

Tc = 135 °C

(1), T

j = 175 °C,  = 0.1

25

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature(3)

-40 to +175

°C

1.

Value based on Rth(j-c) max (per diode)

2.

Value based on Rth(j-c) max (per device)

3.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

---------------

1

Rth j

a

–



--------------------------



Table 3. Thermal resistance parameters

Symbol

Parameter

Typ.

Max.

Unit

Rth(j-c)

Junction to case

Per diode

1.6

2.4

°C/W

Per device

0.875

1.275

Rth(c)

Coupling

-

0.15

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-5

60

µA

Tj = 150 °C

-

50

250

VF

(2)

Forward voltage drop

Tj = 25 °C

IF = 6 A

-

1.56

1.75

V

Tj = 150 °C

-

1.98

2.5

1.

tp = 10 ms,  < 2%

2.

tp = 500 µs,  < 2%

Número de pieza similar - STPSC12H065C

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STPSC12H065	146Kb / 8P	650 V power Schottky silicon carbide diode July 2015 Rev 2
STMicroelectronics	STPSC12H065-Y	454Kb / 9P	Dedicated to PFC applications October 2016 Rev 4

More results

Descripción similar - STPSC12H065C

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STPSC6H065	218Kb / 14P	650 V power Schottky silicon carbide diode
	STPSC20H065CW	111Kb / 8P	650 V power Schottky silicon carbide diode
	STPSC8H065D	228Kb / 14P	650 V power Schottky silicon carbide diode
	STPSC8H065DLF	383Kb / 12P	650 V power Schottky silicon carbide diode March 2021
	STPSC20065	631Kb / 13P	650 V power Schottky silicon carbide diode July 2017 Rev 2
	STPSC8065	503Kb / 9P	650 V power Schottky silicon carbide diode July 2017 Rev 2
	STPSC4H065DLF	381Kb / 12P	650 V power Schottky silicon carbide diode March 2021 Rev 2
	STPSC10H065D	122Kb / 9P	650 V power Schottky silicon carbide diode
	STPSC4H065D	178Kb / 10P	650 V power Schottky silicon carbide diode November 2013 Rev 3
	STPSC16H065C	170Kb / 8P	650 V power Schottky silicon carbide diode December 2015 Rev 5

More results

STPSC12H065C Datasheet(PDF) 2 Page - STMicroelectronics

STPSC12H065C Datasheet(HTML) 2 Page - STMicroelectronics

Número de pieza similar - STPSC12H065C

Descripción similar - STPSC12H065C

Html Pages

1 2 3 4 5 6 7 8

Datasheet Descarga

Enlace URL