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IRFB7430PBF Datasheet(Hoja de datos) 2 Page - Kersemi Electronic Co., Ltd.

No. de Pieza. IRFB7430PBF
Descripción  Brushed Motor drive applications
Descarga  8 Pages
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Fabricante  KERSEMI [Kersemi Electronic Co., Ltd.]
Página de inicio  http://www.kersemi.com
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Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.15mH
RG = 50, IAS = 100A, VGS =10V.
„ ISD  100A, di/dt  990A/μs, VDD V(BR)DSS, TJ  175°C.
… Pulse width  400μs; duty cycle  2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ Ris measured at TJ approximately 90°C..
‰ This value determined from sample failure population,
starting TJ = 25°C, L= 0.15mH, RG = 50, IAS = 100A, VGS =10V.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.014
–––
V/°C
–––
1.0
1.3
m
–––
1.2
–––
VGS = 6.0V, ID = 50A g
VGS(th)
Gate Threshold Voltage
2.2
–––
3.9
V
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
μA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
2.1
–––
RDS(on)
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1.0mAd
VDS = VGS, ID = 250μA
Static Drain-to-Source On-Resistance
VGS = 20V
VGS = -20V
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 10V, ID = 100A g
Absolute Maximum Ratings
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
k
IAR
Avalanche Current
Ãd
A
EAR
Repetitive Avalanche Energy
d
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RJC
Junction-to-Case
j
–––
0.40
RCS
Case-to-Sink, Flat Greased Surface
0.50
–––
RJA
Junction-to-Ambient
–––
62
°C/W
A
°C
300
760
See Fig. 14, 15, 22a, 22b
375
Max.
409
™
289
™
1524
195
1360
-55 to + 175
± 20
2.5
10lbf
x in (1.1Nx m)
www.kersemi.com
2014-8-10
2
IRFB7430PBF




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