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SPA04N60C3 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPA04N60C3 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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2003-10-02 Page 1 SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO220-3-31 1 2 3 Marking 04N60C3 04N60C3 04N60C3 Type Package Ordering Code SPP04N60C3 P-TO220-3-1 Q67040-S4366 SPB04N60C3 P-TO263-3-2 Q67040-S4407 SPA04N60C3 P-TO220-3-31 Q67040-S4413 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 4.5 2.8 4.51) 2.81) A Pulsed drain current, tp limited by Tjmax ID puls 13.5 13.5 A Avalanche energy, single pulse ID=3.4, VDD=50V EAS 130 130 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50V EAR 0.4 0.4 Avalanche current, repetitive tAR limited by Tjmax IAR 4.5 4.5 A Gate source voltage static VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 50 31 W SPP_B Operating and storage temperature Tj , Tstg -55...+150 °C |
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