STR-Y6754 datasheet(3/34 Pages) SANKEN

No. de pieza	STR-Y6754

Descripción Electrónicos	Quasi-Resonant Controllers with Integrated Power MOSFET

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Fabricante Electrónico	SANKEN [Sanken electric]

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STR-Y6700 Series

STR-Y6700 - DS Rev.4.0

SANKEN ELECTRIC CO.,LTD.

3

Oct. 07, 2014

1.

Absolute Maximum Ratings

 The polarity value for current specifies a sink as "+," and a source as "−," referencing the IC.

 Unless otherwise specified T

A = 25 °C

Parameter

Symbol

Test Conditions

Pins

Rating

Units

Notes

Drain Peak Current

(1)

IDPEAK

Single pulse

1 – 2

6.7

A

STR–Y6763 / 63A

8.9

STR–Y6765

9.2

STR–Y6753

10.5

STR–Y6766 / 66A

11.0

STR–Y6754

14.6

STR–Y6735 / 35A

Maximum Switching Current

(2)

IDMAX

Single pulse

Ta=

−20 to 125°C

1 – 2

6.7

A

STR–Y6763 / 63A

8.9

STR–Y6765

9.2

STR–Y6753

10.5

STR–Y6766 / 66A

11.0

STR–Y6754

14.6

STR–Y6735 / 35A

Avalanche Energy

(3)(4)

EAS

ILPEAK=2.3A

1 – 2

60

mJ

STR–Y6763 / 63A

ILPEAK=2.6A

77

STR–Y6765

ILPEAK=2.9A

99

STR–Y6753

ILPEAK=3.2A

116

STR–Y6766 / 66A

ILPEAK=4.1A

198

STR–Y6754

ILPEAK=3.5A

152

STR–Y6735 / 35A

D/ST Pin Voltage

VSTARTUP

1 − 4

− 1.0 to V

DSS

V

S/OCP Pin Voltage

VOCP

2 – 4

− 2.0 to 6.0

V

VCC Pin Voltage

VCC

3 – 4

35

V

FB/OLP Pin Voltage

VFB

5 – 4

− 0.3 to 7.0

V

FB/OLP Pin Sink Current

IFB

5 – 4

10.0

mA

BD Pin Voltage

VBD

6 – 4

− 6.0 to 6.0

V

Power Dissipation

(5)

PD1

With infinite

heatsink

1 – 2

19.9

W

STR–Y6763 / 63A

21.8

STR–Y6765

20.2

STR–Y6753

23.6

STR–Y6766 / 66A

21.5

STR–Y6735 / 35A

STR–Y6754

Without heatsink

1 – 2

1.8

W

Control Part Power Dissipation

PD2

VCC×ICC

3 – 4

0.8

W

Internal Frame Temperature in

Operation

TF

−

− 20 to 115

°C

Operating Ambient Temperature

TOP

−

− 20 to 115

°C

Storage Temperature

Tstg

−

− 40 to 125

°C

Junction Temperature

Tch

−

150

°C

(1) Refer to 3.3 MOSFET Safe Operating Area Curves

(2) The maximum switching current is the drain current determined by the drive voltage of the IC and threshold voltage

(Vth) of the MOSFET.

(3) Refer to Figure 3-2 Avalanche Energy Derating Coefficient Curve

(4) Single pulse, V

DD = 99 V, L = 20 mH

(5) Refer to 3.2 T

A-PD1curves.

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