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TPS65150PWP Datasheet(PDF) 4 Page - Texas Instruments

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No. de Pieza. TPS65150PWP
Descripción  Low Input Voltage, Compact LCD Bias IC
Descarga  47 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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TPS65150PWP Datasheet(HTML) 4 Page - Texas Instruments

 
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TPS65150
SLVS576B – SEPTEMBER 2005 – REVISED JANUARY 2016
www.ti.com
Pin Functions (continued)
PIN
I/O
DESCRIPTION
NAME
VQFN
HTSSOP
Input of the VCOM buffer. If this pin is connected to ground, the VCOM buffer is
IN
14
11
I
disabled.
PGND
10, 11
7, 8
Power ground.
REF
23
20
O
Internal reference output, typically 1.213 V.
Supply pin of the positive, negative charge pump and boost converter gate drive
SUP
12
9
I/O
circuit. This pin should be connected to the output of the main boost converter.
SW
8, 9
5, 6
I
Switch pin of the boost converter.
VCOM
13
10
O
VCOM buffer output. Typically a 1-µF output capacitor is required on this pin.
Positive output voltage to drive the TFT gates with an adjustable fall time. This
VGH
18
15
O
pin is internally connected with a MOSFET switch to the positive charge pump
input CPI.
VIN
7
4
I
This is the input voltage pin of the device.
Thermal Pad
The thermal pad must to be soldered to GND
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Voltages on pin VIN(2)
–0.3
7
V
Voltages on pin SUP
–0.3
15.5
V
Voltage on pin SW
20
V
Voltage on CTRL
–0.3
7
V
Voltage on GD
15.5
V
Voltage on CPI
32
V
Continuous power dissipation
See Thermal Information
Lead temperature (soldering, 10 s)
260
°C
Operating junction temperature
–40
150
°C
Storage temperature
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values are with respect to network ground terminal.
6.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
±500
C101(2)
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
4
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Product Folder Links: TPS65150


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