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TPS65150PWP Datasheet(PDF) 5 Page - Texas Instruments

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No. de Pieza. TPS65150PWP
Descripción  Low Input Voltage, Compact LCD Bias IC
Descarga  47 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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TPS65150PWP Datasheet(HTML) 5 Page - Texas Instruments

 
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TPS65150
www.ti.com
SLVS576B – SEPTEMBER 2005 – REVISED JANUARY 2016
6.3 Recommended Operating Conditions
MIN
NOM
MAX
UNIT
VI
Input voltage range
1.8
6
V
VO
Boost converter output voltage
15
V
L
Inductor(1)
4.7
µH
TA
Operating ambient temperature
–40
85
°C
TJ
Operating junction temperature
–40
125
°C
(1)
Refer to application section for further information.
6.4 Thermal Information
TPS65150
THERMAL METRIC(1)
PWP (HTSSOP)
RGE (VQFN)
UNIT
24 PINS
24 PINS
RθJA
Junction-to-ambient thermal resistance
36.4
34.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
18.8
36.2
°C/W
RθJB
Junction-to-board thermal resistance
15.9
12
°C/W
ψJT
Junction-to-top characterization parameter
0.4
0.5
°C/W
ψJB
Junction-to-board characterization parameter
15.7
12.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
1.3
3.2
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics
VI = 3.3 V, V(VS) = 10 V, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
VI
Input voltage (VIN)
1.8
6
V
Supply current (VIN)
Device not switching
14
25
µA
Supply current (SUP)
Device not switching
1.9
3
mA
Supply current (VCOM buffer)
750
1500
µA
VIT–
Undervoltage lockout threshold (VIN)
VI falling
1.6
1.8
V
VIT+
Undervoltage lockout threshold (VIN)
VI rising
1.7
1.9
V
Thermal shutdown temperature
TJ rising
155
°C
threshold
Thermal shutdown temperature
10
°C
hysteresis
LOGIC SIGNALS
VIH
High-level input voltage (CTRL)
1.6
V
VIL
Low-level input voltage (CTRL)
0.4
V
IIH, IIL
Input current (CTRL)
CTRL = VI or GND
0.01
0.2
µA
BOOST CONVERTER
VO
Output voltage
15
V
Vref
Boost converter reference voltage (FB)
1.136
1.146
1.154
V
IIB
Input bias current (FB)
10
100
nA
VO = 10 V
200
300
rDS(on)
Drain-source on-state resistance (Q1)
IDS = 500 mA
m
VO = 5 V
305
450
VO = 10 V
8
15
rDS(on)
Drain-source on-state resistance (Q2)
IDS = 500 mA
VO = 5 V
12
22
IDS
Drain-source current rating (Q2)
1
A
Current limit (SW)
2
2.5
3.4
A
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