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TLP5214 Datasheet(PDF) 4 Page - Toshiba Semiconductor

No. de pieza TLP5214
Descripción Electrónicos  Isolated IGBT/Power MOSFET gate drive
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP5214 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TLP5214
2015-12-26
4
Recommended Operating Conditions (Note)
Characteristics
Symbol
Min
Typ.
Max
Unit
Total Output Supply Voltage (Note 5)
(VCC2
−V
EE)
15
-
30
V
Negative Output Supply Voltage
(VE
−V
EE)
0
-
15
V
Positive Output Supply Voltage
(VCC2
−V
E)
15
-
30
− (V
E
−V
EE)
V
Input On-State Current
(Note 6)
IF(ON)
7.5
-
12
mA
Input Off-State Voltage
VF(OFF)
0
-
0.8
V
Operating frequency
(Note 7)
f
-
-
50
kHz
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Note 5: If the Vcc rise slope is sharp, an internal circuit might not operate with stability. Please design the VCC rise
slope under 3.0 V /
μs.
Note 6: Input signal rise time (fall time)
≤ 0.5 μs.
Note 7: Exponential waveform. IOPH
≥ -4.0 A (≤ 90 ns), IOPL ≤ 4.0 A (≤ 90 ns), Ta = 110°C
Electrical Characteristics (Note) (Ta =
−40 to 110 °C, unless otherwise specified)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.*
Max
Unit
Input Forward Voltage
VF
IF = 10 mA, Ta = 25°C
1.4
-
1.7
V
Input Reverse Current
IR
VR = 5 V
-
-
10
μA
Input Capacitance
Ct
V=0 V, f=1 MHz, Ta = 25°C
-
95
-
pF
FAULT Low Level Output Voltage
VFAULTL
IFAULT = 1.1 mA, VCC1=5.5 V
-
0.2
0.4
V
IFAULT = 1.1 mA, VCC1=3.3 V
-
0.2
0.4
FAULT High Level Output Current
IFAULTH
VFAULT = 5.5 V, VCC1 = 5.5 V, Ta = 25°C
-
-
0.5
μA
VFAULT = 5.5 V, VCC1 = 3.3 V, Ta = 25°C
-
-
0.3
High Level Output Current
(Note 8)
IOPH
1
VO = VCC2
4 V
-
−4.0
−1.2
A
VO = VCC2
7 V
-
−6.5
−3.0
Low Level Output Current
(Note 8)
IOPL
2
VO = VEE + 2.5 V
1.2
3.5
-
VO = VEE + 7 V
3
5.5
-
Low Level Output Current
During Fault Condition
IOLF
VO
− VEE = 14 V
90
150
230
mA
High Level Output Voltage
VOH
3
IO =
−100 mA
VCC2
−0.3 VCC2−0.2
-
V
Low Level Output Voltage
VOL
4
IO = 100 mA
-
0.1
0.2
Clamp Pin Threshold Voltage
VtClamp
-
3.0
-
Clamp Low Level Sinking Current
ICL
VO = VEE + 2.5 V
0.56
1.8
-
A
High Level Supply Current
ICC2H
5
IO = 0 mA
-
2.4
3.5
mA
Low Level Supply Current
ICC2L
6
IO = 0 mA
-
2.3
3.5
Blanking Capacitor Charging Current
ICHG
7
VDESAT = 2 V
−0.13
−0.24
−0.33
Blanking Capacitor Discharge Current
IDSCHG
8
VDESAT = 7 V
10
49
-
DESAT Threshold Voltage
VDESAT
VCC2-VE>VUVLO-
6
6.5
7.5
V
UVLO Threshold Voltage
VUVLO
+
9
VO>5 V
10.5
11.6
13.5
VUVLO
-
9
VO<5 V
9.2
10.3
11.1
UVLO hysteresis
UVLOHYS
-
1.3
-
(*): All typical values are at Ta = 25°C
Note 8: IO application time
≤ 50 μs, 1 pulse


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