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DMP6110SSSQ Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP6110SSSQ
Descripción  P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  6 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP6110SSSQ
Document number: DS38641 Rev. 1 - 2
2 of 6
www.diodes.com
March 2016
© Diodes Incorporated
DMP6110SSSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
20
V
Drain Current (Note 7) VGS = -10V
t < 10s
TA = +25°C
TA = +70°C
ID
-4.5
-3.6
A
Maximum Body Diode Forward Current (Note 7)
IS
-2.1
A
Pulsed Drain Current (10
s Pulse, Duty Cycle = 1%)
IDM
-19
A
Avalanche Current (Note 8) L = 0.1mH
IAS
-17.6
A
Avalanche Energy (Note 8) L = 0.1mH
EAS
15.4
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
1.5
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RJA
80
°C/W
t<10s
48
°C/W
Total Power Dissipation (Note 7)
PD
2.0
W
Thermal Resistance, Junction to Ambient (Note 7)
Steady State
RθJA
61
°C/W
t<10s
37
°C/W
Thermal Resistance, Junction to Case
RθJC
6.4
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BVDSS
-60
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -48V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = ±16V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(TH)
-1
-3
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
86
110
mΩ
VGS = -10V, ID = -4.5A
98
130
VGS = -4.5V, ID =-3.5A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
1030
pF
VDS = -30V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
49.1
Reverse Transfer Capacitance
Crss
38.7
Gate Resistance
RG

13.6

VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
Qg
9.5
nC
VDS = -30V, ID = -5A
Total Gate Charge (VGS = -10V)
Qg

19.4

Gate-Source Charge
Qgs
2.3
Gate-Drain Charge
Qgd
3.6
Turn-On Delay Time
tD(ON)
3.7
ns
VGS = -10V, VDS = -30V, RGEN = 6,
ID = -5A
Turn-On Rise Time
tR
6.3
Turn-Off Delay Time
tD(OFF)
58.7
Turn-Off Fall Time
tF

26.1

Body Diode Reverse Recovery Time
tRR
14.85
ns
IS = -5A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR

8.8

nC
IS = -5A, dI/dt = 100A/μs
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. UIS in production with L = 0.1mH, starting TA = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.




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