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TPD1058FA Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPD1058FA Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 15 page TPD1058FA Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol PIN Rating Unit Note Supply voltage VDD VDD −0.3 to 6 V - Input voltage VIN , VSTBY IN,STBY −0.3 to 6 V - DIAG output voltage VDIAG DIAG −0.3 to 6 V - DIAG output current IDIAG DIAG 5 mA - Output voltage VOUT OUT -0.3 to 40 V N channel DMOS (VDSS=60V) Output current IOUT OUT Internally limited A - Power dissipation (Note 2) PD - 1.84 W Note 2 Single pulse active clamp capability (Note 3) EAS - 95 mJ - Active clamp current IAR OUT 6 A - Operating temperature Topr - −40 to 125 °C - Channel temperature Tch - 150 °C - Storage temperature Tstg - −40 to 150 °C - Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Rating Unit Thermal resistance, channel to ambient Rth (ch−a) 67.6 °C / W Note 2: Note 3: Active clamp capability (single pulse) test condition VDD=12V, Tch =25°C(initial), L=3.9 mH, IAR=6 A Glass epoxy board Material: FR-4(4 layer) Board size: 76.2mm×114.3mm×1.6mm Via: φ0.3mm(2 point) 2015-2-9 5 |
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