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SD103AWS Datasheet(PDF) 2 Page - Microdiode Electronics (Jiangsu) Co.,Ltd.

No. de pieza SD103AWS
Descripción Electrónicos  Schottky Barrier Diode
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Fabricante Electrónico  CHENDA [Microdiode Electronics (Jiangsu) Co.,Ltd.]
Página de inicio  http://www.microdiode.com/en
Logo CHENDA - Microdiode Electronics (Jiangsu) Co.,Ltd.

SD103AWS Datasheet(HTML) 2 Page - Microdiode Electronics (Jiangsu) Co.,Ltd.

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Schottky Barrier Diode
SD103AWS/SD103BWS/SD103CWS
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Reverse Breakdown Voltage SD103AWS
SD103BWS
SD103CWS
V(BR)R
40
30
20
V
IR=10
μA
IR=10
μA
IR=10
μA
Forward voltage
VF
0.37
0.60
V
IF=20mA
IF=200mA
Reverse current
SD103AWS
SD103BWS
SD103CWS
IRM
5.0
μA
VR=30V
VR=20V
VR=10V
Junction Capacitance
CJ
50
pF
VR=0,f=1MHz
Reverse Recovery Time
trr
10
ns
IR=IF=200mA
Irr=0.1*IR,RL=100
Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
２０１４－０３　０１版
ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ


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