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ST002 Datasheet(PDF) 1 Page - Stanson Technology |
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ST002 Datasheet(HTML) 1 Page - Stanson Technology |
1 / 7 page ST1002 N Channel Enhancement Mode MOSFET 3.0A 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com ST1002 2013 . V1 1 DESCRIPTION The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching . PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Produce Code FEATURE 100V/3.0A, RDS(ON) = 135mΩ @VGS = 10V 100V/2.5A, RDS(ON) = 140mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3 1 2 D G S 3 1 2 102YA |
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