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1N3766 Datasheet(PDF) 1 Page - Diotec Semiconductor

No. de pieza 1N3766
Descripción Electrónicos  Silicon-Power Rectifiers
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Fabricante Electrónico  DIOTEC [Diotec Semiconductor]
Página de inicio  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

1N3766 Datasheet(HTML) 1 Page - Diotec Semiconductor

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1) Valid, if the temp. of the stud is kept to 100
/C – Gültig, wenn die Temp. am Gewinde auf 100/C gehalten wird
1
06.08.2002
1N 1183 ... 1N 1190, 1N 3766, 1N 3768
PBY 301 ... PBY 307
Silicon-Power Rectifiers
Silizium-Leistungs-Gleichrichter
Nominal current – Nennstrom
35 A
Repetitive peak reverse voltage
50…1000 V
Periodische Spitzensperrspannung
Metal case – Metallgehäuse
DO-5
Weight approx. – Gewicht ca.
6 g
Standard polarity:
Cathode to stud / am Gewinde
Index R:
Anode to stud / am Gewinde (e.g. 1N 1183 A/R)
Dimensions / Maße in mm
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM [V]
1N 1183
= PBY 301
50
60
1N 1184
= PBY 302
100
120
1N 1186
= PBY 303
200
240
1N 1188
= PBY 304
400
480
1N 1190
= PBY 305
600
720
1N 3766
= PBY 306
800
1000
1N 3768
= PBY 307
1000
1200
Max. average forward rectified current, R-load
T
C = 100
/CI
FAV
35 A 1)
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
f > 15 Hz
I
FRM
80 A 1)
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave
T
A = 25
/CI
FSM
450 A
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Peak forward surge current, 60 Hz half sine-wave
T
A = 25
/CI
FSM
500 A
Stoßstrom für eine 60 Hz Sinus-Halbwelle
Rating for fusing – Grenzlastintegral, t < 10 ms
T
A = 25
/Ci2t
1000 A2s
Operating junction temperature – Sperrschichttemperatur
T
j
– 65…+175
/C
Storage temperature – Lagerungstemperatur
T
S
– 65…+175
/C
Type
13
M6
SW17
Ø3.5


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