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BCW66G Datasheet(PDF) 2 Page - Diotec Semiconductor

No. de pieza BCW66G
Descripción Electrónicos  Surface mount Si-Epitaxial PlanarTransistors
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Fabricante Electrónico  DIOTEC [Diotec Semiconductor]
Página de inicio  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BCW66G Datasheet(HTML) 2 Page - Diotec Semiconductor

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1) Tested with pulses t
p = 300
:s, duty cycle # 2% – Gemessen mit Impulsen t
p = 300
:s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
43
01.11.2003
General Purpose Transistors
BCW 65, BCW 66
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
I
C = 100 mA, IB = 10 mA
V
CEsat
300 mV
I
C = 500 mA, IB = 50 mA
V
CEsat
700 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
I
C = 100 mA, IB = 10 mA
V
BEsat
1.25 V
I
C = 500 mA, IB = 50 mA
V
BEsat
2 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
V
CE = 10 V, IC = 100
:A
BCW 65A / 66F
h
FE
35
BCW 65B / 66G
h
FE
50
BCW 65C / 66H
h
FE
80
V
CE = 1 V, IC = 10 mA
BCW 65A / 66F
h
FE
75
BCW 65B / 66G
h
FE
110
BCW 65C / 66H
h
FE
180
V
CE = 1 V, IC = 100 mA
BCW 65A / 66F
h
FE
100
160
250
BCW 65B / 66G
h
FE
160
250
400
BCW 65C / 66H
h
FE
250
350
630
V
CE = 2 V, IC = 500 mA
BCW 65A / 66F
h
FE
–35–
BCW 65B / 66G
h
FE
–60–
BCW 65C / 66H
h
FE
100
Gain-Bandwidth Product – Transitfrequenz
V
CE = 5 V, IC = 50 mA, f = 100 MHz
f
T
170 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB = 10 V, IE = ie = 0, f = 1 MHz
C
CB0
6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB = 0.5 V, IC = ic = 0, f = 1 MHz
C
EB0
60 pF
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
420 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BCW 67, BCW 68
Marking – Stempelung
BCW 65A = EA
BCW 65B = EB
BCW 65C = EC
BCW 66F = EF
BCW 66G = EG
BCW 66H = EH


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