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BCW66G Datasheet(PDF) 2 Page - Diotec Semiconductor |
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BCW66G Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page 1) Tested with pulses t p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen t p = 300 :s, Schaltverhältnis # 2% 2) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 43 01.11.2003 General Purpose Transistors BCW 65, BCW 66 Characteristics (T j = 25 /C) Kennwerte (T j = 25 /C) Min. Typ. Max. Collector saturation volt. – Kollektor-Sättigungsspg. 1) I C = 100 mA, IB = 10 mA V CEsat – – 300 mV I C = 500 mA, IB = 50 mA V CEsat – – 700 mV Base saturation voltage – Basis-Sättigungsspannung 1) I C = 100 mA, IB = 10 mA V BEsat – – 1.25 V I C = 500 mA, IB = 50 mA V BEsat – – 2 V DC current gain – Kollektor-Basis-Stromverhältnis 1) V CE = 10 V, IC = 100 :A BCW 65A / 66F h FE 35 – – BCW 65B / 66G h FE 50 – – BCW 65C / 66H h FE 80 – – V CE = 1 V, IC = 10 mA BCW 65A / 66F h FE 75 – – BCW 65B / 66G h FE 110 – – BCW 65C / 66H h FE 180 – – V CE = 1 V, IC = 100 mA BCW 65A / 66F h FE 100 160 250 BCW 65B / 66G h FE 160 250 400 BCW 65C / 66H h FE 250 350 630 V CE = 2 V, IC = 500 mA BCW 65A / 66F h FE –35– BCW 65B / 66G h FE –60– BCW 65C / 66H h FE – 100 – Gain-Bandwidth Product – Transitfrequenz V CE = 5 V, IC = 50 mA, f = 100 MHz f T – 170 MHz – Collector-Base Capacitance – Kollektor-Basis-Kapazität V CB = 10 V, IE = ie = 0, f = 1 MHz C CB0 – 6 pF – Emitter-Base Capacitance – Emitter-Basis-Kapazität V EB = 0.5 V, IC = ic = 0, f = 1 MHz C EB0 – 60 pF – Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft R thA 420 K/W 2) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BCW 67, BCW 68 Marking – Stempelung BCW 65A = EA BCW 65B = EB BCW 65C = EC BCW 66F = EF BCW 66G = EG BCW 66H = EH |
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