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CSH13003H6D Datasheet(PDF) 1 Page - Nanjing International Group Co

No. de pieza CSH13003H6D
Descripción Electrónicos  power switching applications
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Fabricante Electrónico  DGNJDZ [Nanjing International Group Co]
Página de inicio  http://www.dgnjdz.com/
Logo DGNJDZ - Nanjing International Group Co

CSH13003H6D Datasheet(HTML) 1 Page - Nanjing International Group Co

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CSH13003H6D TRANSISTOR (NPN)
FEATURES
· power switching applications
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current -Continuous
1.5
A
PC
Collector Power Dissipation
1.5
W
TJ
Junction
Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC =5mA, IE=0
700
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA, IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=2mA, IC=0
9
V
Collector cut-off current
ICBO
VCB=700V,IE=0
1
mA
Collector cut-off current
ICEO
VCE=400V,IB=0
0.5
mA
Emitter cut-off current
IEBO
VEB=9V, IC=0
1
mA
hFE1
VCE=5V, IC= 0.5 A
8
40
DC current gain
hFE2
VCE=5V, IC= 1.5A
5
Collector-emitter saturation voltage
VCE(sat)
IC=1A,IB=0.25A
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=1A,IB=0.25A
1.2
V
Transition frequency
fT
VCE=10V,Ic=100mA, f =1MHz
5
MHz
Fall time
tf
IC=1A, IB1=-IB2=0.2A, VCC=100V
0.5
µs
1 2 3
TO-126
1.BASE
2.COLLECTOR
3.EMITTER
Storage time
tS
IC=250mA (UI9600)
2
4
μs
CLASSIFICATION OF
hFE(1)
Range
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF tS
Rank
A1
A2
B1
B2
Range
2-2.5 (μs )
2.5-3(μs )
3-3.5(μs )
3.5-4 (μs )
DONGGUAN NANJING ELECTRONICS LTD.,


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