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PZT3904 Datasheet(PDF) 1 Page - Nanjing International Group Co |
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PZT3904 Datasheet(HTML) 1 Page - Nanjing International Group Co |
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1 / 1 page SOT-223 Plastic-Encapsulate Transistors PZT3904 TRANSISTOR (NPN) FEATURES Low Voltage and Low Current Complementary to PZT3906 General Purpose Amplifier and Switch Application MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.01mA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=0.01mA,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 50 nA Collector cut-off current ICEX VCE=30V, VEB=3V 50 nA Emitter cut-off current IEBO VEB=5V, IC=0 50 nA hFE(1) VCE=1V, IC=0.1mA 40 hFE(2) VCE=1V, IC=1mA 70 hFE(3) VCE=1V, IC=10mA 100 300 DC current gain hFE(4) VCE=1V, IC=50mA 60 IC=10mA,IB=1mA 0.2 V Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.3 V IC=10mA,IB=1mA 0.65 0.85 V Base-emitter saturation voltage VBE(sat) IC=50mA,IB=5mA 0.95 V Transition frequency fT VCE=20V,IC=10mA, f=100MHz 300 MHz Collector output capacitance Cob VCB=5V, IE=0, f=1MHz 4 pF Delay time td 35 Rise time tr VCC=3V, VBE(off)=0.5V IC=10mA, IB1= -IB2=1mA 35 ns Storage time ts 200 Fall time tf VCC=3V, IC=10mA, IB1=-IB2=1mA 50 ns Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 1 W RθJA Thermal Resistance From Junction To Ambient 125 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ SOT-223 1. BASE 2. COLLECTOR 3. EMITTER DONGGUAN NANJING ELECTRONICS LTD., |
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