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MTBH0N25J3-0-T3-G Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
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MTBH0N25J3-0-T3-G Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 5/9 MTBH0N25J3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=250 μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 ID, Drain Current(A) Ta=25°C Pulsed VDS=10V VDS=15V Gate Charge Characteristics 0 2 4 6 8 10 024 68 10 12 Qg, Total Gate Charge(nC) VDS=200V ID=3A Maximum Safe Operating Area 0.01 0.1 1 10 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) TC=25°C, Tj=175°C VGS=10V, RθJC=5°C/W Single Pulse DC 100m RDSON Limited 1s 100 μs 1ms 10ms Maximum Drain Current vs Case Temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 25 50 75 100 125 150 175 TC, Case Temperature(°C) VGS=10V, RθJC=5°C/W |
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