MTBH0N25J3-0-T3-G datasheet(1/9 Pages) CYSTEKEC

No. de pieza	MTBH0N25J3-0-T3-G

Descripción Electrónicos	N-Channel Enhancement Mode Power MOSFET

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Fabricante Electrónico	CYSTEKEC [Cystech Electonics Corp.]

Página de inicio	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C895J3

Issued Date : 2015.12.10

Revised Date :

Page No. : 1/9

MTBH0N25J3

CYStek Product Specification

N-Channel Enhancement Mode Power MOSFET

MTBH0N25J3

BVDSS

250V

ID@VGS=10V, TC=25°C

3.5A

ID@VGS=10V, TA=25°C

1.0A

780mΩ

VGS=10V, ID=3A

RDSON(TYP)

Features

• Low Gate Charge

• Simple Drive Requirement

• Pb-free lead plating and halogen-free package

Equivalent Circuit

Outline

Ordering Information

Device

Package

Shipping

MTBH0N25J3-0-T3-G

TO-252

(Pb-free lead plating and halogen-free package)

2500 pcs / Tape & Reel

MTBH0N25J3

TO-252(DPAK)

VGS=4.5V, ID=2A

735mΩ

G

D S

G：Gate

D：Drain

S：Source

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T3 : 2500 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

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MTBH0N25J3-0-T3-G Datasheet(PDF) 1 Page - Cystech Electonics Corp.

MTBH0N25J3-0-T3-G Datasheet(HTML) 1 Page - Cystech Electonics Corp.

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