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1N5407 Datasheet(PDF) 1 Page - Taiwan Memory Technology

No. de pieza 1N5407
Descripción Electrónicos  3A, 50V - 1000V Silicon Rectifiers
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Fabricante Electrónico  TMT [Taiwan Memory Technology]
Página de inicio  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

1N5407 Datasheet(HTML) 1 Page - Taiwan Memory Technology

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CREAT BY ART
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
VRRM
50
100
200
400
600
800
1000
V
VRMS
35
70
140
280
420
560
700
V
VDC
50
100
200
400
600
800
1000
V
IF(AV)
A
I
2t
A
2s
CJ
pF
RθJA
°C/W
TJ
°C
TSTG
°C
Note1: Pulse Test with PW=300μs, 1% Duty Cycle
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1406023
Version: G15
1N5400 - 1N5408
Taiwan Semiconductor
3A, 50V - 1000V Silicon Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Maximum repetitive peak reverse voltage
MECHANICAL DATA
Case:
DO-201AD
DO-201AD
Weight:
1.2 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
1N
5400
1N
5401
200
1N
5404
1N
5406
1N
5407
1N
5408
UNIT
1N
5402
A
Maximum instantaneous forward voltage (Note 1)
@ 3 A
VF
V
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
IR
5
μA
100
Typical junction capacitance (Note 2)
50
Maximum reverse current @ rated VR
TJ=25°C
TJ=125°C
Storage temperature range
- 55 to +150
Rating for fusing (t<8.3ms)
166
1.0
Typical thermal resistance
40
Operating junction temperature range
- 55 to +150


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