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GA20JT12-263 Datasheet(PDF) 7 Page - GeneSiC Semiconductor, Inc.

No. de Pieza. GA20JT12-263
Descripción  OFF Silicon Carbide Junction Transistor
Descarga  12 Pages
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Fabricante  GENESIC [GeneSiC Semiconductor, Inc.]
Página de inicio  http://www.genesicsemi.com/
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GA20JT12-263 Datasheet(HTML) 7 Page - GeneSiC Semiconductor, Inc.

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GA20JT12-263
Nov 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 7 of 11
Section V: Driving the GA20JT12-263
Drive Topology
Gate Drive Power
Consumption
Switching
Frequency
Application Emphasis
Availability
TTL Logic
High
Low
Wide Temperature Range
Coming Soon
Constant Current
Medium
Medium
Wide Temperature Range
Coming Soon
High Speed – Boost Capacitor
Medium
High
Fast Switching
Production
High Speed – Boost Inductor
Low
High
Ultra Fast Switching
Coming Soon
Proportional
Lowest
High
Wide Drain Current Range
Coming Soon
Pulsed Power
Medium
N/A
Pulse Power
Coming Soon
A: Static TTL Logic Driving
The GA20JT12-263 may be driven with direct (5 V) TTL logic and current amplification. The amplified current level of the supply must meet or
exceed the steady state gate current (IG,steady) required to operate the GA20JT12-263. Minimum IG,steady is dependent on the anticipated drain
current ID through the SJT and the DC current gain hFE, it may be calculated from the following equation. An accurate value of the hFE may be
read from Figure 4. An optional resistor RG may be used in series with the gate pin to trim IG,steady, also an optional capacitor CG may be added
in parallel with RG to facilitate faster SJT switching if desired, further details on these options are given in the following section.
����������������,������������������������������������������������≈ ��������������������������������(��������,����������������)∗1.5
Figure 21: TTL Gate Drive Schematic
B: High Speed Driving
The SJT is a current controlled transistor which requires a positive gate current for turn-on and to remain in on-state. An idealized gate current
waveform for ultra-fast switching of the SJT while maintaining low gate drive losses is shown in Figure 22, it features a positive current peak
during turn-on, a negative current peak during turn-off, and continuous gate current during on-state.
Figure 22: An idealized gate current waveform for fast switching of an SJT.
An SJT is rapidly switched from its blocking state to on-state when the necessary gate charge, QG, for turn-on is supplied by a burst of high
gate current, IG,on, until the SJT gate-source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged.
������������������������=����������������,����������������∗��������1
������������������������≥������������������������+������������������������
TTL
Gate Signal
5 / 0 V
TTL i/p
5 V
D
S
G
GR
CG
RG
IG,steady


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