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GA20JT12-263 Datasheet(PDF) 9 Page - GeneSiC Semiconductor, Inc.

No. de Pieza. GA20JT12-263
Descripción  OFF Silicon Carbide Junction Transistor
Descarga  12 Pages
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Fabricante  GENESIC [GeneSiC Semiconductor, Inc.]
Página de inicio  http://www.genesicsemi.com/
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GA20JT12-263 Datasheet(HTML) 9 Page - GeneSiC Semiconductor, Inc.

 
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GA20JT12-263
Nov 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 9 of 11
Figure 24: Typical steady state gate current supplied by the
GA03IDDJT30-FR4 board for the GA20JT12-263 with the on
board resistance of 3.75
Figure 25: Maximum gate resistance for safe operation of
the GA20JT12-263 at different drain currents using the
GA03IDDJT30-FR4 board.
B:2: High Speed, Low Loss Drive with Boost Inductor
A High Speed, Low-Loss Driver with Boost Inductor is also capable of driving the GA20JT12-263 at high-speed. It utilizes a gate drive inductor
instead of a capacitor to provide the high-current gate current pulses IG,on and IG,off. During operation, inductor L is charged to a specified IG,on
current value then made to discharge IL into the SJT gate pin using logic control of S1, S2, S3, and S4, as shown in Figure 26. After turn on,
while the device remains on the necessary steady state gate current IG,steady is supplied from source VCC through RG. Please refer to the article
“A current-source concept for
fast and efficient driving of silicon carbide transistors” by Dr. Jacek Rąbkowski for additional information on this
driving topology.
4
Figure 26: Simplified Inductive Pulsed Drive Topology
3 – R
G = (1/RG1 +1/RG2)
-1. Driver is pre-installed with RG1 = RG2 = 7.5
4 – Archives of Electrical Engineering. Volume 62, Issue 2, Pages 333–343, ISSN (Print) 0004-0746, DOI: 10.2478/aee-2013-0026, June 2013
L
RG
VEE
VCC
VCC
VEE
S1
S2
S3
S4
D
S
G
GR


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