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GA20JT12-263 Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

No. de Pieza. GA20JT12-263
Descripción  OFF Silicon Carbide Junction Transistor
Descarga  12 Pages
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Fabricante  GENESIC [GeneSiC Semiconductor, Inc.]
Página de inicio  http://www.genesicsemi.com/
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GA20JT12-263 Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

 
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GA20JT12-263
Nov 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 11
Normally – OFF Silicon Carbide
Junction Transistor
Features
Package
• 175 °C Maximum Operating Temperature
• Gate Oxide Free SiC Switch
• Optional Gate Return Pin
• Exceptional Safe Operating Area
• Excellent Gain Linearity
• Temperature Independent Switching Performance
• Low Output Capacitance
• Positive Temperature Coefficient of R
DS,ON
• Suitable for Connecting an Anti-parallel Diode
7L D2PAK (TO-263-7L)
Advantages
Applications
• Compatible with Si MOSFET/IGBT Gate Drive ICs
• > 20 µs Short-Circuit Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifier Bandwidth
• Down Hole Oil Drilling, Geothermal Instrumentation
• Hybrid Electric Vehicles (HEV)
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA20JT12-263.............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Symbol
Conditions
Value
Unit
Notes
Drain – Source Voltage
VDS
VGS = 0 V
1200
V
Continuous Drain Current
ID
TC = 25°C
45
A
Fig. 17
Continuous Drain Current
ID
TC = 145°C
20
A
Fig. 17
Continuous Gate Current
IG
1.3
A
Continuous Gate Return Current
IGR
1.3
A
Turn-Off Safe Operating Area
RBSOA
TVJ = 175
oC,
Clamped Inductive Load
ID,max = 20
@ VDS
≤ V
DSmax
A
Fig. 19
Short Circuit Safe Operating Area
SCSOA
TVJ = 175
oC, I
G = 1 A, VDS = 800 V,
Non Repetitive
>20
µs
Reverse Gate – Source Voltage
VSG
30
V
Reverse Drain – Source Voltage
VSD
25
V
Power Dissipation
Ptot
TC = 25 °C / 145 °C, tp > 100 ms
282 / 56
W
Fig. 16
Storage Temperature
Tstg
-55 to 175
°C
1
G
TAB
Drain
2
GR
3
S
4
S
5
S
6
S
7
S
Drain
(TAB)
Source
(Pin 3, 4, 5, 6, 7)
Gate
(Pin 1)
Gate Return
(Pin 2)
VDS
=
1200 V
RDS(ON)
=
50 m
Ω
ID (@ 25°C)
=
45 A
ID (@ 145°C)
=
20 A
hFE (@ 25°C)
=
80
Please note: The Source and Gate Return pins
are not exchangeable. Their exchange might
lead to malfunction.


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