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GA20JT12-263 Datasheet(PDF) 2 Page - GeneSiC Semiconductor, Inc.

No. de Pieza. GA20JT12-263
Descripción  OFF Silicon Carbide Junction Transistor
Descarga  12 Pages
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Fabricante  GENESIC [GeneSiC Semiconductor, Inc.]
Página de inicio  http://www.genesicsemi.com/
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GA20JT12-263 Datasheet(HTML) 2 Page - GeneSiC Semiconductor, Inc.

 
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GA20JT12-263
Nov 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 2 of 11
Section II: Static Electrical Characteristics
A: On State
B: Off State
C: Thermal
Section III: Dynamic Electrical Characteristics
A: Capacitance and Gate Charge
B: Switching
1
1 – All times are relative to the Drain-Source Voltage V
DS
Parameter
Symbol
Conditions
Value
Unit
Notes
Min.
Typical
Max.
Drain – Source On Resistance
RDS(ON)
ID = 20 A, Tj = 25 °C
ID = 20 A, Tj = 150 °C
ID = 20 A, Tj = 175 °C
50
83
95
Fig. 5
Gate – Source Saturation Voltage
VGS,SAT
ID = 20 A, ID/IG = 40, Tj = 25 °C
ID = 20 A, ID/IG = 30, Tj = 175 °C
3.44
3.24
V
Fig. 7
DC Current Gain
hFE
VDS = 8 V, ID = 20 A, Tj = 25 °C
VDS = 8 V, ID = 20 A, Tj = 125 °C
VDS = 8 V, ID = 20 A, Tj = 175 °C
80
51
45
Fig. 4
Drain Leakage Current
IDSS
VDS = 1200 V, VGS = 0 V, Tj = 25 °C
VDS = 1200 V, VGS = 0 V, Tj = 150 °C
VDS = 1200 V, VGS = 0 V, Tj = 175 °C
1
2
2
μA
Fig. 8
Gate Leakage Current
ISG
VSG = 20 V, Tj = 25 °C
20
nA
Thermal resistance, junction - case
RthJC
0.53
°C/W
Fig. 20
Parameter
Symbol
Conditions
Value
Unit
Notes
Min.
Typical
Max.
Input Capacitance
Ciss
VGS = 0 V, VDS = 800 V, f = 1 MHz
3825
pF
Fig. 9
Reverse Transfer/Output Capacitance
Crss/Coss
VDS = 800 V, f = 1 MHz
56
pF
Fig. 9
Output Capacitance Stored Energy
EOSS
VGS = 0 V, VDS = 800 V, f = 1 MHz
22
µJ
Fig. 10
Effective Output Capacitance,
time related
Coss,tr
ID = constant, VGS = 0 V, VDS = 0…800 V
100
pF
Effective Output Capacitance,
energy related
Coss,er
VGS = 0 V, VDS = 0…800 V
70
pF
Gate-Source Charge
QGS
VGS = -5…3 V
24
nC
Gate-Drain Charge
QGD
VGS = 0 V, VDS = 0…800 V
80
nC
Gate Charge - Total
QG
104
nC
Internal Gate Resistance – ON
RG(INT-ON)
VGS > 2.5 V, VDS = 0 V, Tj = 175 ºC
0.13
Ω
Turn On Delay Time
td(on)
Tj = 25 ºC, VDS = 800 V,
ID = 20 A, Resistive Load
Refer to Section V for additional
driving information.
12
ns
Fall Time, VDS
tf
15
ns
Fig. 11, 13
Turn Off Delay Time
td(off)
25
ns
Rise Time, VDS
tr
12
ns
Fig. 12, 14
Turn On Delay Time
td(on)
Tj = 175 ºC, VDS = 800 V,
ID = 20 A, Resistive Load
15
ns
Fall Time, VDS
tf
13
ns
Fig. 11
Turn Off Delay Time
td(off)
30
ns
Rise Time, VDS
tr
10
ns
Fig. 12
Turn-On Energy Per Pulse
Eon
Tj = 25 ºC, VDS = 800 V,
ID = 20 A, Inductive Load
Refer to Section V.
320
µJ
Fig. 11, 13
Turn-Off Energy Per Pulse
Eoff
40
µJ
Fig. 12, 14
Total Switching Energy
Etot
360
µJ
Turn-On Energy Per Pulse
Eon
Tj = 175 ºC, VDS = 800 V,
ID = 20 A, Inductive Load
300
µJ
Fig. 11
Turn-Off Energy Per Pulse
Eoff
30
µJ
Fig. 12
Total Switching Energy
Etot
330
µJ


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